Characterization of GaS-deposited CVD diamond films by AES and XPS

✍ Scribed by A.B.M.O Islam; Y Nishiyama; T Tambo; C Tatsuyama; T Ito

• Book ID: 104309117
• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 180 KB
• Volume: 159-160
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/s0169-4332(00)00066-0

✦ Synopsis

Ž

. Ž . Thin GaS films deposited on B-doped diamond as-grown and on oxygen-annealed B-doped diamond O-ann. films Ž .

q Ž . grown by plasma-assisted chemical vapor deposition CVD on p -type Si 001 substrate were characterized by Auger Ž . Ž . electron spectroscopy AES , and X-ray photoemission spectroscopy XPS . The thermal evaporation of GaS single crystal is used for the deposition. Ga and S Auger peaks are observed in the AES spectra of both GaS-deposited samples, and only weak S-Auger peaks are observed in the samples post-annealed at about 9008C. XPS spectra indicate an upward band bending due to GaS deposition and the increase in the downward band bending due to post-annealing at higher temperature. ``Ž . C S and C Ga bonds are observed for GaS-deposited diamond films. Secondary electron emission SEE spectra indicate Ž . that the S-terminated diamond films seem to possess positive electron affinity PEA surface.