✦ LIBER ✦

Interface characteristics of Ge3N4-(n-type) GaAs MIS devices

✍ Scribed by K.P. Pande; M.L. Chen; M. Yousuf; B. Lalevic

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electrical characteristics and memory be

✍ Krishna P. Pande 📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 424 KB

MIS structure GaAs–Ge3N4–Al

✍ Bagratishvili, G. D. ;Dzhanelidze, R. B. ;Kurdiani, N. I. ;Saksaganskii, O. V. 📂 Article 📅 1976 🏛 John Wiley and Sons 🌐 English ⚖ 412 KB

Electrical characteristics and memory be

📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 127 KB

GaAs/Ge3N4/Al structures and mis field-e

✍ G.D. Bagratishvili; R.B. Dzhanelidze; N.I. Kurdiani; Yu.I. Pashintsev; O.V. Saks 📂 Article 📅 1979 🏛 Elsevier Science 🌐 English ⚖ 205 KB

On the photocapacitance of the MIS Struc

✍ Klose, H. ;Maronchuk, Yu. E. ;Senoshenko, O. V. 📂 Article 📅 1974 🏛 John Wiley and Sons 🌐 English ⚖ 323 KB

Interface-state characteristics of GaN/G

✍ E. Lakshmi; A.B. Bhattacharyya 📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 326 KB