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GaAs/Ge3N4/Al structures and mis field-effect transistors based on them

✍ Scribed by G.D. Bagratishvili; R.B. Dzhanelidze; N.I. Kurdiani; Yu.I. Pashintsev; O.V. Saksaganski; V.A. Skorikov

Publisher: Elsevier Science
Year: 1979
Tongue: English
Weight: 205 KB
Volume: 56
Category: Article
ISSN: 0040-6090
DOI: 10.1016/0040-6090(79)90065-8

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