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Interface and Surface Photoreflectance Spectra for GaAs/Si-GaAs Structures

✍ Scribed by Jezierski, K. ;Misiewicz, J. ;Markiewicz, P. ;Panek, M. ;Ściana, B. ;Tlaczała, M. ;Korbutowicz, R.


Publisher
John Wiley and Sons
Year
1995
Tongue
English
Weight
386 KB
Volume
147
Category
Article
ISSN
0031-8965

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Surface and interface of GaAsSI-GaAs str
✍ K Jezierski; P Sitarek; J Misiewicz; M Panek; B Ściana; R Korbutowicz; M Tłaczał 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 406 KB

## Epitaxial layers of GaAs were grown by NlOCVD technique on St-GaAs substrates. Photoreflectance (PR) spectra were measured at room temperature for energies in the vicinity of the E0 critical point for p-type as well as n-type doped GaAs/SI-GaAs structures. Two experimental methods for the further