## Epitaxial layers of GaAs were grown by NlOCVD technique on St-GaAs substrates. Photoreflectance (PR) spectra were measured at room temperature for energies in the vicinity of the E0 critical point for p-type as well as n-type doped GaAs/SI-GaAs structures. Two experimental methods for the further
โฆ LIBER โฆ
Fourier resolution of surface and interface contributions to photoreflectance spectra of multilayered structures
โ Scribed by Scheibler, H. E. ;Alperovich, V. L. ;Jaroshevich, A. S. ;Terekhov, A. S.
- Publisher
- John Wiley and Sons
- Year
- 1995
- Tongue
- English
- Weight
- 596 KB
- Volume
- 152
- Category
- Article
- ISSN
- 0031-8965
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