Interdiffusion of GaInNAs/GaAs laser structures
β Scribed by Peng, C.S.; Liu, H.F.; Jouhti, T.; Pavelescu, E.-M.; Konttinen, J.; Pessa, M.
- Book ID
- 114455950
- Publisher
- The Institution of Electrical Engineers
- Year
- 2003
- Tongue
- English
- Weight
- 262 KB
- Volume
- 150
- Category
- Article
- ISSN
- 1350-2433
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π SIMILAR VOLUMES
## Abstract We have studied structural properties of InGaAs/GaAs superlattice sample prepared by Molecular Beam Epitaxy (MBE) using high resolution Xβray diffractometer (HRXRD). Increasing strain relaxation and defect generations are observed with the increasing Rapid Thermal Annealing (RTA) temper
## Abstract Photoreflectance (PR) spectroscopy has been applied to study of stepβlike GaInNAs/GaInNAs/GaAs double quantum well (DQW) structures grown by molecular beam epitaxy. PR features related to optical transitions in the active part of the stepβlike QW structure, i.e. GaInNAs/GaInNAs QW, as w