Interdiffusion and Schottky-barrier-height variations in Au-W(Ti)/n-GaAs contacts
- Publisher
- Elsevier Science
- Year
- 1978
- Tongue
- English
- Weight
- 162 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0042-207X
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β¦ Synopsis
Classified abstracts 33983407 permeates helium contained in analysed probes. It is found that the coefficient of trapping He ions in the pump is 0.76 f 30% and it does not deoend on discharge voltage in the range 0.9 to 3.3 kV. The life of the indicator is lo4 &alysesat a sensitivity of 5 x 10-r" A/torr. V V Pimenov, Prib Tekh Eksper, No 2, 1975, 250-251 (in Russion).
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In this work, barrier height inhomogeneity and its origin are investigated for Au and Cu/n-InP metal/ semiconductor contacts. The effective barrier height values of the Au and Cu/n-InP Schottky barrier diodes (SBDs) have been obtained as 0.480 and 0.404 eV from current-voltage (I-V) characteristics
no effect. By plasma etching the LED's, the surface leakage current can be reduced by > 10X. This is found to be due to F adsorbed on