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Interdiffusion and Schottky-barrier-height variations in Au-W(Ti)/n-GaAs contacts


Publisher
Elsevier Science
Year
1978
Tongue
English
Weight
162 KB
Volume
28
Category
Article
ISSN
0042-207X

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✦ Synopsis


Classified abstracts 33983407 permeates helium contained in analysed probes. It is found that the coefficient of trapping He ions in the pump is 0.76 f 30% and it does not deoend on discharge voltage in the range 0.9 to 3.3 kV. The life of the indicator is lo4 &alysesat a sensitivity of 5 x 10-r" A/torr. V V Pimenov, Prib Tekh Eksper, No 2, 1975, 250-251 (in Russion).


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On barrier height inhomogeneities of Au
✍ H. Γ‡etin; E. Ayyildiz πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 258 KB

In this work, barrier height inhomogeneity and its origin are investigated for Au and Cu/n-InP metal/ semiconductor contacts. The effective barrier height values of the Au and Cu/n-InP Schottky barrier diodes (SBDs) have been obtained as 0.480 and 0.404 eV from current-voltage (I-V) characteristics