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Interactions between inversion domains and InGaN/GaN multiple quantum wells investigated by transmission electron microscopy

✍ Scribed by H.D. Li; T. Wang; N. Jiang; Y.H. Liu; J. Bai; S. Sakai


Book ID
108341762
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
408 KB
Volume
247
Category
Article
ISSN
0022-0248

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Inhomogeneities of InGaN/GaN MOVPE multi
✍ Kret, S. ;Ivaldi, F. ;Sobczak, K. ;Czernecki, R. ;Leszczyński, M. 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 458 KB

## Abstract The structural investigation of InGaN/GaN:Si multiple quantum well (MQW) samples grown by low‐pressure metal‐organic vapor phase epitaxy (LP‐MOVPE) in a two temperatures (2__T__) process on high‐pressure GaN mono‐crystalline substrates is performed by transmission electron microscopy (T