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Interaction of Slip Dislocations in Silicon Crystals Having Low Dislocation Densities

✍ Scribed by Matsui, J.


Publisher
John Wiley and Sons
Year
1975
Tongue
English
Weight
624 KB
Volume
27
Category
Article
ISSN
0031-8965

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## Abstract Bulk GaAs and InP crystals with diameter of 4β€³ or more can now be grown with very low dislocation densities (EPD considerably below 1000 cm^–2^) using the Vertical Gradient Freeze (VGF) growth technique and rigorous process optimization by the aid of numerical simulation. It turns out t