Transmission electron microscopy (TEM) and synchrotron radiation double-crystal topography (SRDT) have been employed to investigate Si/SiGe/Si heterostructures grown by ultra-high vacuum chemical vapor deposition (UHVCVD) on bonded Si-on-insulator (SOI) wafers. A configuration of misfit dislocation
Interaction of cavities with misfit dislocations in SiGe/Si heterostructures
β Scribed by D.M. Follstaedt; S.M. Myers; J.A. Floro; S.R. Lee
- Book ID
- 114168828
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 399 KB
- Volume
- 127-128
- Category
- Article
- ISSN
- 0168-583X
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