Integration of silk protein in organic and light-emitting transistors
β Scribed by R. Capelli; J.J. Amsden; G. Generali; S. Toffanin; V. Benfenati; M. Muccini; D.L. Kaplan; F.G. Omenetto; R. Zamboni
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 835 KB
- Volume
- 12
- Category
- Article
- ISSN
- 1566-1199
No coin nor oath required. For personal study only.
β¦ Synopsis
We present the integration of a natural protein into electronic and optoelectronic devices by using silk fibroin as a thin film dielectric in an organic thin film field-effect transistor (OFET) ad an organic light emitting transistor device (OLET) structures. Both n- (perylene) and p-type (thiophene) silk-based OFETs are demonstrated. The measured electrical characteristics are in agreement with high-efficiency standard organic transistors, namely charge mobility of the order of 10(-2) cm(2)/Vs and on/off ratio of 10(4). The silk-based optolectronic element is an advanced unipolar n-type OLET that yields a light emission of 100nW.
π SIMILAR VOLUMES
Electrochemical interface doping is introduced as a new concept for the realization of organic lightβemitting fieldβeffect transistors (OβLEFTs). In a bottom contact tetracene transistor a 2β4 nm poly(ethyleneβoxide) layer with lithium triflate was inserted as interface layer between the gateβoxide