Novel structure of GaAs-based interdigit
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Abdul Manaf Hashim; Seiya Kasai; Kouichi Iizuka; Tamotsu Hashizume; Hideki Haseg
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Article
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2007
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Elsevier Science
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English
โ 330 KB
Theoretical analysis of potential distribution in the interdigital-gated high electron mobility transistor (HEMT) plasma wave device was carried out. The dc I-V characteristics of capacitively coupled interdigital structure showed that uniformity of electric field under the interdigital gates was im