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Integration of interdigital-gated plasma wave device for proximity communication system application

โœ Scribed by Abdul Manaf Hashim; Seiya Kasai; Tamotsu Hashizume; Hideki Hasegawa


Book ID
103833534
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
248 KB
Volume
38
Category
Article
ISSN
0026-2692

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Novel structure of GaAs-based interdigit
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Theoretical analysis of potential distribution in the interdigital-gated high electron mobility transistor (HEMT) plasma wave device was carried out. The dc I-V characteristics of capacitively coupled interdigital structure showed that uniformity of electric field under the interdigital gates was im