Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier
✍ Scribed by Abdul Manaf Hashim; Seiya Kasai; Kouichi Iizuka; Tamotsu Hashizume; Hideki Hasegawa
- Book ID
- 104051410
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 330 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0026-2692
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✦ Synopsis
Theoretical analysis of potential distribution in the interdigital-gated high electron mobility transistor (HEMT) plasma wave device was carried out. The dc I-V characteristics of capacitively coupled interdigital structure showed that uniformity of electric field under the interdigital gates was improved compared to the dc-connected interdigital gate structure. Admittance measurements of capacitively coupled interdigital gate structure in the microwave region of 10-40 GHz showed the conductance modulation by drain-source voltage. These results indicate the existence of plasma wave interactions.