Integration of a stack of two fluorine doped silicon oxide thin films with interconnect metallization for a sub-0.35 μm inter-metal dielectric application

✍ Scribed by L. Baud; G. Passemard; Y. Gobil; H. M'Saad; A. Corte; F. Pires; P. Fugier; P. Noel; P. Rabinzohn; I. Beinglass

• Book ID: 114155680
• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 513 KB
• Volume: 37-38
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(97)00121-4