✦ LIBER ✦

Integrating transistors on high-ohmic silicon

✍ Scribed by S.E. Wouters; S.A. Audet; M.H. Kim; E.M. Schooneveld

Book ID: 103607466
Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 452 KB
Volume: 288
Category: Article
ISSN: 0168-9002
DOI: 10.1016/0168-9002(90)90461-e

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Monolithic integration of detectors and

Monolithic integration of detectors and transistors on high-resistivity silicon

✍ Gian-Franco Dalla Betta; Giovanni Batignani; Maurizio Boscardin; Luciano Bosisio 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 224 KB

We report on the most recent results from an R&D activity aimed at the development of silicon radiation detectors with embedded front-end electronics. The key features of the fabrication technology and the available active devices are described. Selected results from the characterization of transist

Ohmic contacts on high purity P-type sil

Ohmic contacts on high purity P-type silicon

✍ B. C. Dobbs; P. M. Hemenger; S. R. Smith 📂 Article 📅 1977 🏛 Springer US 🌐 English ⚖ 457 KB

Monolithic integration of a nuclear radi

Monolithic integration of a nuclear radiation sensor and transistors on high-purity silicon

✍ Audet, S.A.; Wouters, S.E. 📂 Article 📅 1990 🏛 IEEE 🌐 English ⚖ 670 KB

Compact modeling of high-frequency disto

Compact modeling of high-frequency distortion in silicon integrated bipolar transistors

✍ Schroter, M.; Pehlke, D.R.; Lee, T.-Y. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 183 KB

High-frequency silicon alloy transistor

✍ Rittmann, A.D.; Miles, T.J. 📂 Article 📅 1956 🏛 Institute of Electrical and Electronics Engineers 🌐 English ⚖ 634 KB

Silicon-on-insulator-based high-voltage,

Silicon-on-insulator-based high-voltage, high-temperature integrated circuit gate driver for silicon carbide-based power field effect transistors

✍ Huque, M.A.; Tolbert, L.M.; Blalock, B.J.; Islam, S.K. 📂 Article 📅 2010 🏛 The Institution of Engineering and Technology 🌐 English ⚖ 800 KB