Insulator-Metal Transition in Nanostructured Ni-Al Thin Films
β Scribed by Ng, H.P.; Ngan, A.H.W.
- Book ID
- 121189803
- Publisher
- Cambridge University Press
- Year
- 1999
- Weight
- 897 KB
- Volume
- 581
- Category
- Article
- ISSN
- 0272-9172
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Conductivity and electron tunneling measurements are reported for amorphous, oxygen rich Ti films in the vicinity of the Anderson metal-insulator transition. In the metallic films the conductivity varies proportional to ~/-T, while for the insulating films the Mott variable range hopping process is
Results are reported for YbFe 4 Sb 12 thin films grown by pulsed laser deposition (PLD) with thicknesses (t) 60004t4300 A Λ. Thick films (t41000 A Λ) show electrical transport behavior typical of bulk specimens. Surprisingly, a metal to insulator transition (MIT) is observed for films with to1000 A