Metalβinsulator transition in quantum do
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A Shailos; M El Hassan; C Prasad; J.P Bird; D.K Ferry; L.-H Lin; N Aoki; K Nakao
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Article
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2000
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Elsevier Science
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English
β 159 KB
We present evidence for a re-entrant metal-insulator transition that arises in quantum dot arrays as the gate voltage is used to sweep their density of states past the Fermi level. The form of the temperature variation of the conductance observed in these arrays can be accounted for using a function