Metal–insulator transition in quantum dot arrays

✍ Scribed by A Shailos; M El Hassan; C Prasad; J.P Bird; D.K Ferry; L.-H Lin; N Aoki; K Nakao; Y Ochiai; K Ishibashi; Y Aoyagi; T Sugano

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 159 KB
• Volume: 27
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.2000.0832

✦ Synopsis

We present evidence for a re-entrant metal-insulator transition that arises in quantum dot arrays as the gate voltage is used to sweep their density of states past the Fermi level. The form of the temperature variation of the conductance observed in these arrays can be accounted for using a functional form derived from studies of the metal-insulator transition in two dimensions, although the values obtained for the fit parameters suggest that the behavior we observe here may be quite distinct to that found in two dimensions.