For the first time we have observed quantized conductance in a split gate quantum point contact prepared in a strained In 0.77 Ga 0.23 As/InP two-dimensional electron gas (2DEG). Although quantization effects in gated two-dimensional semiconductor structures are theoretically well known and proven i
Instabilities in quantum point contact structures
β Scribed by M.N. Wybourne; Jolinda C. Smith; C. Berven; R. Ramasubramaniam; S.M. Goodnick
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 220 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0749-6036
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β¦ Synopsis
We discuss the appearance of strong nonlinearities including S-type negative differential conductance in the I -V characteristics of quantum point contact (QPC) structures. Timedependent measurements demonstrate that the highly nonlinear d.c. I -V features are associated with a temporal average of random telegraph switching (RTS) between different current levels. The RTS is only observed when the voltage across the device is such that the chemical potential on one side of the QPC is aligned with the bottom of a one-dimensional subband in the QPC. As the chemical potential is moved further into the subband, the switching behavior disappears until the next subband minimum is reached.
π SIMILAR VOLUMES
A scattering theory calculation is presented for the potential distribution and the associated current-voltage characteristic in a ballistic quantum point contact. Following Landauer's idea, the electric field is calculated as the response to a given incoming current. The field is finite only near t
The dc Josephson effect in a superconducting quantum point contact, where supercurrent flows through a small number of channels, is reviewed. The central role of Andreev levels is emphasized which carry the whole supercurrent in short symmetric Josephson junctions including tunnel junctions. A simpl