𝔖 Bobbio Scriptorium

✦ LIBER ✦

[Inst. Electr. Eng. Japan 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 - Osaka, Japan (4-7 June 2001)] Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) - A high-efficiency 5-GHz-band SOI power MOSFET having a self-aligned drain offset structure

✍ Scribed by Matsumoto, S.; Hiraoka, Y.; Sakai, T.

Book ID: 126637637
Publisher: Inst. Electr. Eng. Japan
Year: 2001
Weight: 416 KB
Category: Article
ISBN-13: 9784886860569
DOI: 10.1109/ISPSD.2001.934566

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[Inst. Electr. Eng. Japan 13th Internati

[Inst. Electr. Eng. Japan 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 - Osaka, Japan (4-7 June 2001)] Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) - Innovative press pack modules for high power IGBTs

✍ Kaufmann, S.; Lang, T.; Chokhawala, R. 📂 Article 📅 2001 🏛 Inst. Electr. Eng. Japan 🌐 Japanese ⚖ 463 KB

[Inst. Electr. Eng. Japan 13th Internati

[Inst. Electr. Eng. Japan 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 - Osaka, Japan (4-7 June 2001)] Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) - Large area 4H-SiC power MOSFETs

✍ Agarwal, A.; Sei-Hyung Ryu, ; Das, M.; Lipkin, L.; Palmour, J.; Saks, N. 📂 Article 📅 2001 🏛 Inst. Electr. Eng. Japan 🌐 Japanese ⚖ 467 KB

[Inst. Electr. Eng. Japan 13th Internati

[Inst. Electr. Eng. Japan 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 - Osaka, Japan (4-7 June 2001)] Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) - An ultra dense trench-gated power MOSFET technology using a self-aligned process

✍ Jun Zeng, ; Dolny, G.; Kocon, C.; Stokes, R.; Kraft, N.; Brush, L.; Grebs, T.; J 📂 Article 📅 2001 🏛 Inst. Electr. Eng. Japan 🌐 Japanese ⚖ 430 KB

[Inst. Electr. Eng. Japan 13th Internati

[Inst. Electr. Eng. Japan 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 - Osaka, Japan (4-7 June 2001)] Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) - A new 800 V lateral MOSFET with dual conduction paths

✍ Disney, D.R.; Paul, A.K.; Darwish, M.; Basecki, R.; Rumennik, V. 📂 Article 📅 2001 🏛 Inst. Electr. Eng. Japan 🌐 Japanese ⚖ 394 KB

[Inst. Electr. Eng. Japan 13th Internati

[Inst. Electr. Eng. Japan 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 - Osaka, Japan (4-7 June 2001)] Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) - Design consideration for 2 kV SiC-SIT

✍ Onose, H.; Yatsuo, T.; Watanabe, A.; Yokota, T.; Ishikawa, T.; Sanpei, I.; Somey 📂 Article 📅 2001 🏛 Inst. Electr. Eng. Japan 🌐 Japanese ⚖ 367 KB

[Inst. Electr. Eng. Japan 13th Internati

[Inst. Electr. Eng. Japan 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 - Osaka, Japan (4-7 June 2001)] Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) - Thyristor with integrated forward recovery protection function

✍ Schulze, H.-J.; Niedernostheide, F.-J.; Kellner-Werdehausen, U. 📂 Article 📅 2001 🏛 Inst. Electr. Eng. Japan 🌐 Japanese ⚖ 430 KB