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[Inst. Electr. Eng. Japan 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 - Osaka, Japan (4-7 June 2001)] Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) - Advanced 60 μm thin 600 V punch-through IGBT concept for extremely low forward voltage and low turn-off loss

✍ Scribed by Matsudai, T.; Nozaki, H.; Umekawa, S.; Tanaka, M.; Kobayashi, M.; Hattori, H.; Nakagawa, A.

Book ID
120089687
Publisher
Inst. Electr. Eng. Japan
Year
2001
Tongue
Japanese
Weight
313 KB
Category
Article
ISBN-13
9784886860569

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