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[Inst. Electr. Eng. Japan 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 - Osaka, Japan (4-7 June 2001)] Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) - A novel gate drive circuit for low-loss system using IGBT saturation voltage characteristics

✍ Scribed by Takizawa, S.; Igarashi, S.; Kuroki, K.

Book ID: 115469569
Publisher: Inst. Electr. Eng. Japan
Year: 2001
Weight: 396 KB
Volume: 0
Category: Article
ISBN-13: 9784886860569
DOI: 10.1109/ispsd.2001.934633

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