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InSb quantum dots and quantum rings on InAs-rich surface

โœ Scribed by K.D. Moiseev; Ya.P. Parkhomenko; E.A. Gushchina; S.S. Kizhaev; M.P. Mikhailova


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
234 KB
Volume
256
Category
Article
ISSN
0169-4332

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Strain and optical transitions in InAs q
โœ Y Fu; F Ferdos; M Sadeghi; Q.X Zhao; S.M Wang; A Larsson ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 218 KB

To investigate the strain characteristics of InAs quantum dots grown on (001) GaAs by solid source molecular beam epitaxy we have compared calculated transition energies with those obtained from photoluminescence measurements. Atomic force microscopy shows the typical lateral size of the quantum dot