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InP-to-InGaAs interfacial strain grown by using tertiarybutylarsine and tertiarybutylphosphine

โœ Scribed by Xiangang Xu; Deliang Cui; Zhe Tang; Xiaopeng Hao; Heime K.

Book ID
111783812
Publisher
SP Science China Press
Year
2002
Tongue
English
Weight
426 KB
Volume
45
Category
Article
ISSN
1674-7283

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Interfacial roughnes and alloy scatterin
Interfacial roughnes and alloy scattering in the InGaAs/InAlAs/InP system grown by ALE and LAMBE
โœ A. Christou; Z. Hatzopoulos; A. Dimoulas; G. Kiriakidis ๐Ÿ“‚ Article ๐Ÿ“… 1991 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 195 KB

Molecular beam epitaxial growth of InxGal\_yAs and In,,All\_~As on InP has been carried out by atomic layer epitaxy (ALE) and laser" assisted molecular beam epitaxy (LAMBE). It is shown that these growth techniques have minimized both alloy clustering and interface roughness in the InGaAs/InAIAs sys