๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Initial stages of oxidation of hydrogen-terminated Si surface stored in air

โœ Scribed by Taka-aki Miura; Michio Niwano; Daisei Shoji; Nobuo Miyamoto


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
469 KB
Volume
100-101
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Oxidation of hydrogen terminated Ge(1&#x
โœ Younghwan Lee; Kibyung Park; Sangwoo Lim ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 370 KB

Ge is a promising starting material for device fabrication due to its advantages, which include narrow band gap, high hole mobility, and high solubility for p-type dopants [1,2]. In order to clean the Ge surface prior to gate oxidation, surface oxidation, and etching must occur in succession. Becaus

In situ electron spin resonance of initi
โœ Takahide Umeda; Satoshi Yamasaki; Masayasu Nishizawa; Tetsuji Yasuda; Kazunobu T ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 255 KB

## ลฝ . ลฝ . ลฝ . We have made for the first time electron spin resonance ESR measurements on Si 111 7 = 7 and Si 100 2 = 1 surfaces during the initial oxidation processes at room temperature. The present results clearly show that, at a very initial stage of oxidation of Si surfaces where only a few