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In situ electron spin resonance of initial oxidation processes of Si surfaces

โœ Scribed by Takahide Umeda; Satoshi Yamasaki; Masayasu Nishizawa; Tetsuji Yasuda; Kazunobu Tanaka

Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
255 KB
Volume
162-163
Category
Article
ISSN
0169-4332

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โœฆ Synopsis

ลฝ

. ลฝ . ลฝ . We have made for the first time electron spin resonance ESR measurements on Si 111 7 = 7 and Si 100 2 = 1 surfaces during the initial oxidation processes at room temperature. The present results clearly show that, at a very initial stage of oxidation of Si surfaces where only a few surface layers were oxidized, a variety of defects are formed that have not been seen in ex situ ESR studies of SiO rSi structures.

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