Infrared thermopile sensor based on AlGaAs—GasAs micromachining

✍ Scribed by A. Dehé; K. Fricke; H.L. Hartnagel

• Book ID: 103959561
• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 466 KB
• Volume: 47
• Category: Article
• ISSN: 0924-4247
• DOI: 10.1016/0924-4247(94)00936-c

✦ Synopsis

Infrared bolometry is demonstrated using broadband gold black absorbers positioned on micromachined AlGaAs membranes of high thermal resistance. With a cascade of (20 \mathrm{AlGaAs}) thermocouple, the radiation-induced temperature difference is measured. Black-body radiation in the range of (315-530 \mathrm{~K}) is used to test the sensor and a sensitivity of (R=145 \mathrm{~V} \mathrm{~W}^{-1}) and corresponding detectivity of (D^{*}=4.1 \times 10^{7} \mathrm{~cm} \mathrm{~Hz}{ }^{1 / 2} \mathrm{~W}^{-1}) are reached. The relatively simple technology that is compatible with MESFET technology results in thermopile sensors that are compared to similar sensors fabricated in polysilicon and Bi-Sb-Te technologies.