Photoluminescence Spectra of GaS 0.75 Se 0.25 Layered Single Crystals Photoluminescence (PL) spectra of GaS 0.75 Se 0.25 layered single crystals have been studied in the wavelength region of 500-850 nm and in the temperature range of 10-200 K. Two PL bands centered at 527 ( 2.353 eV, A-band) and 658
Infrared photoluminescence from TlGaS2 layered single crystals
β Scribed by N. S. Yuksek; N. M. Gasanly; A. Aydinli; H. Ozkan; M. Acikgoz
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 167 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0232-1300
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Photoluminescence spectra of Tl 4 GaIn 3 S 8 layered crystals grown by Bridgman method have been studied in the wavelength region of 500-780 nm and in the temperature range of 26-130 K with extrinsic excitation source (Ξ» exc = 532 nm), and at T = 26 K with intrinsic excitation source (Ξ» exc = 406 nm
## Abstract The results of low temperature electron paramagnetic resonance (EPR) study of Fe doped TlGaS~2~ single crystal in the temperature range of 5β300 K are presented. Iron was added to the growth mixture in amounts corresponding to a molar ratio Fe/Ga of about 1%. The EPR signal due to Fe^3+