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Infrared Free-Carrier Absorption in n-Type Silicon

✍ Scribed by P. K. Basu; B. R. Nag

Publisher
John Wiley and Sons
Year
1972
Tongue
English
Weight
197 KB
Volume
53
Category
Article
ISSN
0370-1972

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## Abstract Infrared absorption of n‐type indium selenide is studied in the 2.5 to 50 ΞΌm spectral range at 300 Β°K. Lattice absorption peaks are observed between 25 and 50 ΞΌm. Tin‐doped samples with an electron concentration higher than 10^16^ cm^βˆ’3^ exhibit free carrier absorption for Ξ» larger than