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Infrared detection properties of Zn-doped Si p-i-n diodes

โœ Scribed by Maher, A.T.; Streetman, B.G.; Holonyak, N., Jr.

Book ID
114589794
Publisher
IEEE
Year
1969
Tongue
English
Weight
273 KB
Volume
16
Category
Article
ISSN
0018-9383

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## Abstract Erโ€doped ZnO/Si heteroโ€junctions have been formed by laser ablating an Erโ€contained ZnO target onto pโ€Si(100) substrates. Light emitting diodes fabricated by using these samples exhibited bright green (536 nm and 556 nm), red (665 nm) and 1.54 ยตm emissions at room temperature. A light e