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Electrically-detected magnetic resonance near the p-doped/n-doped interface of Si junction diodes

โœ Scribed by E.H. Poindexter; F.C. Rong; W.R. Buchwald; G.J. Gerardi; D.J. Keeble; W.L. Warren

Book ID
103966914
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
448 KB
Volume
72
Category
Article
ISSN
0927-7757

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Electrically detected magnetic resonance
Electrically detected magnetic resonance of near-interface defects in Si pn-junction structures with LOCOS isolation
โœ T Wimbauer; Y Mochizuki; K Ito; M Horikawa; T Kitano ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 151 KB

## ลฝ . Electrically detected magnetic resonance EDMR measurements on planar Si pn-junctions with LOCOS isolation show different types of point defects. We observe P -centers at the SiO rSi interface and detect for the first time via EDMR the b 2 ลฝ . so-called ''74G doublet'' -hydrogen-complexed ox