Electrically detected magnetic resonance of near-interface defects in Si pn-junction structures with LOCOS isolation

✍ Scribed by T Wimbauer; Y Mochizuki; K Ito; M Horikawa; T Kitano

• Book ID: 104309175
• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 151 KB
• Volume: 159-160
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/s0169-4332(00)00157-4

✦ Synopsis

Ž

. Electrically detected magnetic resonance EDMR measurements on planar Si pn-junctions with LOCOS isolation show different types of point defects. We observe P -centers at the SiO rSi interface and detect for the first time via EDMR the b 2 Ž . so-called ''74G doublet'' -hydrogen-complexed oxygen vacancies in SiO LOCOS isolation . The location of the probed 2 oxide defects has to be close enough to the SiO rSi interface so that a communication with the junction current can take 2 place.