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Infrared and Raman Spectroscopy of Acceptors in Diamond: Boron Impurities

✍ Scribed by Kim, Hyunjung ;Grimsditch, M. ;Anthony, T.R. ;Ramdas, A.K. ;Rodriguez, S.


Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
130 KB
Volume
181
Category
Article
ISSN
0031-8965

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Far-infrared photoconductivity spectra of strained multi-quantum well Ge/Ge 1Β± Β±x Si x (x % 0.1) heterostructures resulting from the excitation of shallow acceptors were investigated. The spectra are shown to be shifted to the long-wavelength end of the far-infrared range if compared with acceptors