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Infrared absorption study on carbon and oxygen behavior in Czochralski silicon crystals

โœ Scribed by Shimura, F.; Baiardo, J. P.; Fraundorf, P.

Book ID
125469154
Publisher
American Institute of Physics
Year
1985
Tongue
English
Weight
487 KB
Volume
46
Category
Article
ISSN
0003-6951

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Some impurities are known to modify the properties of grown-in microdefects in Si crystals at relatively low concentrations when the only operating mechanism is trapping of either vacancies (V) or self-interstitials (I), or both, by the major impurity state. First of all, doping affects the critical