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Influences of the Si(1 1 3) anisotropy on Ge nanowire formation and related island shape transition

✍ Scribed by Zhaohui Zhang; Koji Sumitomo; Hiroo Omi; Toshio Ogino


Book ID
117216304
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
290 KB
Volume
497
Category
Article
ISSN
0039-6028

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Adding a phosphorus-containing species during chemical vapor deposition of Ge islands on Si(0 0 1) modiΓΏes the island sizes and shapes, primarily by changing the surface energies and the relative surface energies of di erent surface facets. Three distinct island shapes occur, but the island types an