Effect of phosphorus on Ge/Si(0 0&#
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T.I Kamins; G Medeiros-Ribeiro; D.A.A Ohlberg; R Stanley Williams
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Article
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2002
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Elsevier Science
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English
β 177 KB
Adding a phosphorus-containing species during chemical vapor deposition of Ge islands on Si(0 0 1) modiΓΏes the island sizes and shapes, primarily by changing the surface energies and the relative surface energies of di erent surface facets. Three distinct island shapes occur, but the island types an