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Influences of substrate surface orientation on misfit accommodation in InGaP/GaAs heterostructures

✍ Scribed by J.W. Lee; D.H. Shin; S.J. Kang; M.S. Oh; J.Y. Kim; T.I. Kim


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
455 KB
Volume
257
Category
Article
ISSN
0040-6090

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## Abstract The MBE growth of PbTe layers on GaAs (100) 2Β° off‐oriented substrates belongs to hard heteroepitaxy, because the two materials differ strongly in their lattice constants and, in addition, they also exhibit different crystal structures. Consequently, phases with different surface orient