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Influences of dot-in-a-well structure and GaAs insertion layer on InP-based InAs quantum dots

✍ Scribed by Byounggu Jo, Jin Soo Kim, Haeng Keun Ahn…

Book ID
120798466
Publisher
The Korean Physical Society
Year
2013
Tongue
English
Weight
421 KB
Volume
62
Category
Article
ISSN
0374-4884

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## Abstract InAs/GaInAsP quantum dot (QD) structure grown by gas source molecular beam epitaxy on InP (100) substrate and designed as an active region for laser applications at 1.55 μm wavelength range has been investigated by optical spectroscopy in order to probe its energy electronic structure.