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Influence of γ radiation on thin Ta2O5–Si structures

✍ Scribed by E Atanassova; A Paskaleva; R Konakova; D Spassov; V.F Mitin


Book ID
108360789
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
248 KB
Volume
32
Category
Article
ISSN
0026-2692

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Interface and oxide properties of Ta 2 O 5 -Si structures with rf sputtered Ta 2 O 5 of 7-80 nm thickness have been investigated using capacitors on p-Si and transistor-like test structures. It is found tha the electrical properties of the films are dominated by an extremely thin SiO 2 layer which i