Effect of microwave radiation on the properties of Ta2O5–Si microstructures
✍ Scribed by E. Atanassova; R.V. Konakova; V.F. Mitin; J. Koprinarova; O.S. Lytvym; O.B. Okhrimenko; V.V. Schinkarenko; D. Virovska
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 511 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0026-2714
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
## Abstract Steadily growing use of electromagnetic fields, especially in conjunction with wireless communication systems, has led to increasing public concern about possible health effects of electromagnetic radiation. However, besides the well‐known thermal effect of electromagnetic fields on bio
Silicon ions were implanted into SiO 2 thin films with various doses and energies. For the films implanted with various ion doses the photoluminescence (PL) intensity of 470 nm firstly increased with the increase of Si ion dose, which is similar to the variation trend of displacement per atom (DPA)