Influence of wall heating on CF2radical in CF4hollow cathode discharge plasma
β Scribed by Toshihiko Arai; Satoshi Aikyo; Miki Goto
- Book ID
- 105720975
- Publisher
- Springer
- Year
- 2000
- Tongue
- English
- Weight
- 103 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0011-4626
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π SIMILAR VOLUMES
The reactive ion etching (RIE) of SiO 2 in CF 4 + H 2 plasma is considered. The influence of activated polymer on the RIE rate of SiO 2 in CF 4 + H 2 plasma is determined by extrapolation of experimentally measured kinetics of the etching rate. It is found that the increased surface coverage by CF 2
Reactive ion etch processes for modern interlevel dielectrics become more and more complex, especially for further scaling of interconnect dimensions. The materials will be damaged within such processes with the result of an increase in their dielectric constants. The capability of selected additive