The reactive ion etching (RIE) of SiO 2 in CF 4 + H 2 plasma is considered. The influence of activated polymer on the RIE rate of SiO 2 in CF 4 + H 2 plasma is determined by extrapolation of experimentally measured kinetics of the etching rate. It is found that the increased surface coverage by CF 2
✦ LIBER ✦
Influence of temperature on the etching rate of SiO2 in CF4 + O2 plasma
✍ Scribed by R. Knizikevičius; V. Kopustinskas
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 137 KB
- Volume
- 83
- Category
- Article
- ISSN
- 0167-9317
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