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Influence of vacancy defects on the luminescence of GaP studied by CL and positrons

✍ Scribed by F. Domínguez-Adame; J. Piqueras; N. de Diego; P. Moser


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
250 KB
Volume
67
Category
Article
ISSN
0038-1098

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The Doppler broadening spectrum of a silicon wafer was measured using a variable-energy positron beam to investigate the effects of vacancy-type defects induced by 180 keV Ar ion implantation. The Sparameter in the damaged layer decreases with annealing temperature up to 673 K, and then increases wi