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Influence of thermal treatment of low dielectric constant SiOC(H) films using MTES/O2 deposited by PECVD

โœ Scribed by R. Navamathavan; Seung Hyun Kim; Yong Jun Jang; An Soo Jung; Chi Kyu Choi


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
821 KB
Volume
253
Category
Article
ISSN
0169-4332

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We report in-situ plasma diagnostics during the deposition of low dielectric constant SiOC(-H) thin films on p-Si(100) substrates by using plasma enhanced chemical vapor deposition with dimethyldimethoxysilane (DMDMS, C 4 H 12 O 2 Si) and oxygen gas as precursors. The bulk plasma was characterized b