Influence of thermal treatment of low dielectric constant SiOC(H) films using MTES/O2 deposited by PECVD
โ Scribed by R. Navamathavan; Seung Hyun Kim; Yong Jun Jang; An Soo Jung; Chi Kyu Choi
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 821 KB
- Volume
- 253
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Low-dielectric constant (low-k) films have been prepared by plasma-enhanced chemical vapor deposition (PECVD) from hexamethyldisiloxane (HMDSO) mixed with oxygen or methane. The films are analyzed by ellipsometry, infrared absorption spectroscopy while their electrical properties are deduced from C2
We report in-situ plasma diagnostics during the deposition of low dielectric constant SiOC(-H) thin films on p-Si(100) substrates by using plasma enhanced chemical vapor deposition with dimethyldimethoxysilane (DMDMS, C 4 H 12 O 2 Si) and oxygen gas as precursors. The bulk plasma was characterized b