We present photoluminescence investigations of GalnAs/GaAs quantum wells with thin cap layers ranging from 20 nm in thickness down to a complete cap layer removal. We observe a strong blue shift of up to 35 meV for an uncovered surface quantum well. A further shift up to the GaAs band edge can be ob
β¦ LIBER β¦
Influence of the thickness of a dielectric layer deposited on the surface of electrodes on the insulating properties of vacuum gaps under alternating voltage
β Scribed by W. Opydo; S. Grzybowski; E. Kuffel
- Publisher
- Elsevier Science
- Year
- 1981
- Weight
- 418 KB
- Volume
- 104
- Category
- Article
- ISSN
- 0378-4363
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## NOTE Effects of Surface Pretreatments of a Glass Substrate on the Properties of Tin Oxide Film Prepared by Vacuum Deposition nitrate at 400ΠC for 4 h with a crucible in air. These treatments will be abbreviated by H-, F-, and K-treatment, respectively. A glass substrate was pretreated by therm