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Influence of the Surface on the Stability of Radiation Defects Introduced by Electron Irradiation

✍ Scribed by Nidaev, E. V. ;Popov, A. I.

Publisher
John Wiley and Sons
Year
1982
Tongue
English
Weight
137 KB
Volume
72
Category
Article
ISSN
0031-8965

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Defects induced by high-energy electrons in Si-SiO 2 structure have been studied by the optically stimulated electron emission (OSEE) method. Si-SiO 2 structures with oxide thickness of 100 nm are irradiated with 23 MeV electrons for different durations. It is shown that most of the defects created