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Influence of the Mn concentration on the electromechanical response d33 of Mn-doped ZnO films

✍ Scribed by J. T. Luo; X. Y. Zhu; G. Chen; F. Zeng; F. Pan

Book ID
112183028
Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
302 KB
Volume
4
Category
Article
ISSN
1862-6254

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## Abstract The influence of the insertion of manganese in γ‐In~2~Se~3~ thin films on their physico chemical, electrical and optical properties is studied. Samples are obtained by elaborating γ‐In~2~Se~3~ by co‐evaporation on a thin layer of manganese, the substrate temperature being __T__ ~s~ = 33