✍ Scribed by Amory, C. ;Guettari, N. ;Bernède, J. C. ;Mebarki, M.
No coin nor oath required. For personal study only.
The influence of the insertion of manganese in γ‐In~2~Se~3~ thin films on their physico chemical, electrical and optical properties is studied. Samples are obtained by elaborating γ‐In~2~Se~3~ by co‐evaporation on a thin layer of manganese, the substrate temperature being T ~s~ = 330 °C. The variation of the thickness of the Mn precursor allows to vary the concentration of Mn relatively to In. It is shown that Mn diffuses in all the thin film and that the films crystallize in the γ‐In~2~Se~3~, they are single phased, at least when x ≤ 0.0197 with x = [Mn]/([Mn] + [In]). The optical band gap is around 1.91 eV. Low temperature photoluminescence spectra of samples containing Mn show a peak situated at 1.38 eV. The electrical properties of γ‐In~2~Se~3~, such as the mobility or the hole carrier concentration are improved with the insertion of Mn. The most valuable result is that the dark conductivity is improved by six orders of magnitude. More generally it is shown that up to x = 0.0125 the Mn doping is very efficient, for higher x value Mn segregates at the grain boundaries. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
📜 SIMILAR VOLUMES
Two groups of Mn films with different mass thicknesses were evaporated onto quartz-glass substrates under vacuum conditions (p = IO-' Pa). The Mn films of the first group were thermally annealed at a temperature of approximately 674 K for half an hour. The other group of the films were obtained with