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Influence of the interface-state density on the electron mobility in silicon inversion layers

✍ Scribed by J. Banqueri; F. Gámiz; J. E. Carceller; P. Cartujo; J. A. López-Villanueva

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Determination of interface-state density

✍ Sakaki, H.; Koitiro Hoh; Sugano, T. 📂 Article 📅 1970 🏛 IEEE 🌐 English ⚖ 461 KB

On the metallic state in high-mobility s

✍ G Brunthaler; A Prinz; G Pillwein; G Bauer; V.M Pudalov; P.E Lindelof; J Ahopelt 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 140 KB

Studies of electron screening effects on

✍ C.C. Shiue; C.T. Sah 📂 Article 📅 1976 🏛 Elsevier Science 🌐 English ⚖ 449 KB

Effect of neutral scatterers on electron

✍ I. Nachev; N. Velchev 📂 Article 📅 1984 🏛 Springer 🌐 English ⚖ 527 KB

The influence of dielectric charge on th

✍ R.E. Oakley; M. Pepper 📂 Article 📅 1972 🏛 Elsevier Science 🌐 English ⚖ 163 KB

Effect of processing conditions on inver

✍ S. Banerjee; K. Chatty; T. P. Chow; R. J. Gutmann 📂 Article 📅 2001 🏛 Springer US 🌐 English ⚖ 324 KB