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Influence of the interface bond type on the far‐infrared reflectivity of InAs/GaSb superlattices

✍ Scribed by Gadaleta, C.; Scamarcio, G.; Fuchs, F.; Schmitz, J.

Book ID
118025919
Publisher
American Institute of Physics
Year
1995
Tongue
English
Weight
607 KB
Volume
78
Category
Article
ISSN
0021-8979

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The electronic and optical properties of InAs=GaSb heterostructures depend on the type of bonding at the interfaces, InSb bonds or GaAs bonds. We have studied cyclotron resonance (CR) in the far-infrared on two samples, each consisting of a single 30 nm InAs quantum well surrounded by thick GaSb bar