Influence of the AsH3inlet pressure on the growth of epitaxial gallium arsenide layers in the GaCl-AsH3-H2system. Range of orientation (115)A-(001)-(115)B

✍ Scribed by G. A. Aleksandrova; I. V. Ivonin; L. G. Lavrent'eva; P. B. Pashchenko; M. V. Chekanova

• Book ID: 112428328
• Publisher: Springer
• Year: 1988
• Tongue: English
• Weight: 755 KB
• Volume: 31
• Category: Article
• ISSN: 1573-9228
• DOI: 10.1007/bf00895989